最近,美国贝尔通讯公司的 Kash 等人第一次报导了电子空穴处于超一维限制状态的Ⅱ—Ⅴ族多量子阱结构的激发光谱。作者的样品用电子束光刻和各向异性刻蚀技术,在多量子阱上做成”量子长条”和“量子圆片”,其横向线度只有500A 左右,因而载流子所受的限制不仅是纵向一维的。这种结构的激发光谱显示出不同于一般一维限制器件的特点。 Recently, Kash et al. Of Bell Communications Inc. of the U.S.A. for the first time reported the excitation spectra of the Group II-V multi-quantum well structure with the electron-hole under the one-dimensional confinement. The author’s sample by electron beam lithography and anisotropic etching technology, made in the multi-quantum well, “quantum strip” and “quantum wafer”, the lateral linearity of only about 500A, so the charge carriers Limitations are not only vertically one-dimensional. The excitation spectrum of this structure shows characteristics that are different from the general one-dimensional limiting devices.