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设计了一种Si基金刚石薄膜上的SAW RF MEMS滤波器,其中心频率为400MHz,叉指换能器(IDT)线宽为5μm。采用中物超硬材料公司定制的硅基金刚石薄膜基片,利用射频溅射方法在金刚石薄膜上制备了厚度为2μm的ZnO压电薄膜,XRD分析证明其具有良好的C轴取向。采用剥离工艺制备IDT,通过精细的工艺控制,得到了设计的IDT图形。最后,对该滤波器样品进行了封装和测试。测试结果表明,其中心频率为378MHz,插损为15.9dB。
A SAW RF MEMS filter on a Si-based diamond film was designed with a center frequency of 400 MHz and an IDT line width of 5 μm. A ZnO thin film with a thickness of 2μm was prepared on a diamond thin film by radio frequency sputtering using a custom-made silicon-based diamond film substrate made of medium-hard superhard material. XRD analysis showed that it has a good C-axis orientation. The preparation of IDT by stripping process, through the fine process control, has been designed IDT graphics. Finally, the filter samples were packaged and tested. The test results show that the center frequency of 378MHz, insertion loss of 15.9dB.