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本文继续研究了LSI常用的p型CZ硅单晶经700℃热处理后产生的新施主。在n型样品中,同样观察到新施主,其性质与p型的相同,但生成率和浓度较p型的低。新施主与热施主有密切关系,在300～800℃间预热处理都可以促进新施主的产生,其中450℃预热处理的促进作用最大。大于800℃预热处理则减少新施主的产生。新施主比热施主稳定,经1050℃、30小时的热处理,浓度约为1.33×10~(15)cm~(-3)的新施主只消除了68％。本文还较详细地讨论了新施主的本质和产生机理。
In this paper, we continue to study the common donor of p-type CZ silicon single crystal produced by 700 ℃ heat treatment. In n-type samples, new donors were also observed with the same properties as p-type but with lower yields and concentrations than p-type. The new donor is closely related to the heat donor. Preheating treatment at 300-800 ℃ can promote the production of new donors, of which the pre-heat treatment at 450 ℃ has the greatest effect. Pre-heat treatment of more than 800 ℃ will reduce the production of new donors. The new donor was stable with the specific heat donor, and only 68% of new donors with the concentration of 1.33 × 10 ~ (15) cm ~ (-3) were eliminated by heat treatment at 1050 ℃ for 30 hours. This article also discusses in more detail the nature and mechanism of the new donor.