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1959年,是发明晶体管的十周年,全部半导体的研究工作无不与晶体管有关。高純度的锗及其类似元素的研究以及p-n結的研究給我們指出了广闊的远景,而且它們第一次在定量方面使理論与实驗吻合。但是,如果我們說,我們已經对所有的半导体(它們的电阻率从10~(-4)到10_(10)欧姆厘米,迁移率从10~(-2)到10~6厘米~2/伏·秒,温度上限一直到4000°,而压力达到10~6大气压)的物理性能都已經掌握了,这将是过分的夸大。我們离开全面掌握固态半导体的性貭还很远,至于液态和气态半导体的性貭,那就更差了。半导体应用的领域在不断扩大。在这新的十年里,研究任务大概会偏重于动力問題,
1959, is the tenth anniversary of the invention of the transistor, all the semiconductor research work are all related to the transistor. The study of high-purity germanium and its similar elements and the study of p-n junction point out a broad perspective for us, and for the first time make theoretical and experimental agreement quantitatively. However, if we say that we have shown that for all the semiconductors (which have resistivities from 10 -4 to 10 10 ohm cm and mobility from 10 -2 to 10 -6 cm -2 / · Second, the upper temperature limit up to 4000 °, and the pressure reaches 10 ~ 6 atmospheric pressure) have mastered the physical properties, which will be exaggerated. It is still far from our ability to fully understand the nature of solid-state semiconductors, and even worse for liquid and gaseous semiconductors. The field of semiconductor applications is constantly expanding. In this new decade, research tasks will probably be more emphasis on motivation,