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Intrinsic hydrogenated amorphous silicon(a-Si:H) film is deposited on n-type crystalline silicon(c-Si) wafer by hotwire chemical vapor deposition(HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density(D_(it)) from lifetime measurement is proposed.The interface state density(D_(it)) measurement is also performed by using deep-level transient spectroscopy(DLTS) to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry(SE) and Fourier transform infrared spectroscopy(FTIR) respectively.Lower values of interface state density(D_(it)) are obtained by using a-Si:H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.
Intrinsic hydrogenated amorphous silicon (a-Si: H) film is deposited on n-type crystalline silicon (c-Si) wafer by hotwire chemical vapor deposition (HWCVD) to analyze the amorphous / crystalline heterointerface passivation properties. Minority carrier lifetime of symmetric The heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system, and a simple method of determining the interface state density (D_ (it)) from lifetime measurement is proposed. The interface state density (D_ (it)) measurement is also performed by using deep-level transient spectroscopy (DLTS) to prove the validity of the simple method. microstructures and hydrogen bonding configurations of a-Si: H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) respectively.Lower values of interface state density (D_ (it)) are obtained by using a-Si: H film with more uniform, compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.