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研制了一种在侧壁形成导热膜的GaN基发光二极管(LED),其中导热层由氮氧化铝形成,导热层外再覆盖一保护层,保护层选自氧化物、氮化物或氟化物。对LED进行电流加速老化实验,分析输出功率随老化时间的变化关系,可以看到侧壁形成导热膜的GaN基LED的输出功率衰减缓慢。实验表明由于氮氧化铝膜具有良好的导热性,其可以有效地耗散发光部分产生的热量,因此在器件侧壁形成AlON导热膜可以改善GaN基LED的输出特性并提高器件的可靠性。
A GaN-based light-emitting diode (LED) with a thermally conductive film formed on a sidewall is fabricated. The thermally conductive layer is formed of aluminum oxynitride. A thermally protective layer is further coated on the thermally conductive layer. The protective layer is selected from oxide, nitride or fluoride. The LED current accelerated aging test, analysis of output power with the aging time changes, we can see the side wall of the thermal film formed GaN-based LED output power decay slowly. Experiments show that since the aluminum oxynitride film has good thermal conductivity, which can effectively dissipate the heat generated by the light emitting portion, forming an AlON thermally conductive film on the sidewall of the device can improve the output characteristics of the GaN based LED and improve the reliability of the device.