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提出了一个简易的浅沟道隔离(STI)应力波动检测电路。该电路可以放入晶圆片狭长的划片槽中,有利于减小芯片测试成本。采用了双开关管以确保测量精度,并实现了对256个器件参数的同时测量,以得到器件的随机波动特性。设置了一系列具有最小沟道长度、相同器件尺寸、不同STI宽度的共9种NMOS阵列。测量了这些阵列的饱和电流Idsat,以分析STI应力对器件性能的影响。此外,还测量了这些阵列的线性区阈值电压Vtlin波动作为对比。测试芯片在28 nm工艺中进行了流片和验证。每种测试电路所占版图面积为415μm×50μm。测试结果表明STI应力对器件性能有明显的影响,而且随着STI宽度的减小,Idsat波动增大,而Vtlin波动减小。
A simple shallow trench isolation (STI) stress ripple detection circuit is proposed. The circuit can be placed into the wafer scribing slot, will help reduce the cost of chip testing. The double switch is used to ensure the measurement accuracy, and the simultaneous measurement of 256 device parameters is realized to obtain the random fluctuation characteristics of the device. A series of 9 NMOS arrays with the smallest channel length, the same device size, and different STI widths are provided. The saturation current, Idsat, of these arrays was measured to analyze the effect of STI stress on device performance. In addition, the linear region threshold voltage Vtlin fluctuations of these arrays were measured as a comparison. The test chip was streamed and verified in a 28 nm process. The layout area of each test circuit is 415μm × 50μm. The test results show that the STI stress has a significant effect on the device performance, and as the STI width decreases, the Idsat fluctuation increases and the Vtlin fluctuation decreases.