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β-Ga2O3是一种宽带隙半导体材料,能带宽度Eg≈5.0eV,在光学和光电子学领域有广泛的应用.用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜,用紫外-可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响.退火后的β-Ga2O3薄膜为多晶结构,与本征β-Ga2O3薄膜相比,Zn掺杂β-Ga2O3薄膜的β-Ga2O3(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°.退火后的Zn掺杂β-Ga2O3薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强.表明退火后Zn掺杂β-Ga2O3薄膜中的Zn原子被激活充当受主.
β-Ga2O3 is a kind of wide bandgap semiconductor material with a band width of Eg≈5.0eV and has been widely used in the fields of optics and optoelectronics.Phosphor magnetron sputtering was used to fabricate Si substrate and far-ultraviolet optical quartz glass substrate The intrinsic β-Ga2O3 thin films and Zn-doped β-Ga2O3 thin films were characterized by UV-visible spectroscopy, X-ray diffraction and fluorescence spectroscopy The effects of Zn doping and thermal annealing on the structure and optical properties of the films were investigated. The annealed β-Ga 2 O 3 films were polycrystalline with the intrinsic β-Ga 2 O 3 phase The β-Ga2O3 (111) diffraction peak intensity of Zn-doped β-Ga2O3 films decreases, the crystallinity decreases and the diffraction peak decreases from 35.69 ° to 35.66 ° .After annealed Zn-doped β-Ga2O3 thin films The optical band gap narrowed, the optical transmission decreased, the optical absorption increased, the near-side absorption appeared, and the UV, blue and green emission of the films were enhanced, indicating that the Zn atoms in the Zn-doped β-Ga2O3 films were activated after being annealed the Lord.