电子辐照硅功率器件是七十年代初发展起来的新工艺,它利用加速器产生高能电子流辐照硅功率器件,使硅材料晶格中的点阵原予发生位移,造成简单的品格空位和间隙原子。这些空位和问隙原子要和硅中的其它杂质、空位相互作用,组成缺陷络合物,形成了深能级的复合中心,如氧宅位对、磷空位对、双空位对等,以控制少子寿命.为了克服目 Electron irradiation silicon power device is a new technology developed in the early seventies, it uses accelerator to generate high-energy electron beam irradiation silicon power device, the lattice lattice in the original silicon lattice displacement, resulting in a simple character space and Gap atoms. These vacancies and interstitials interact with other impurities and vacancies in silicon to form defect complexes that form deep-level recombination centers such as oxygen site pairs, phosphorus vacancy pairs, and double vacancy sites to control In order to overcome the goal