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回顾集成电路的历史,搞集成电路有三个目的:高可靠、高速度和小型化,主要就是为了经济性。研制超大规模集成电路的一个主要目的就是提高成品率、性能效果。这次日本名城大学志村幸雄来华座谈介绍了超大规模集成电路的研究背景和日本的研制体制以及一些技术问题,现摘要转登如下: 通产省超大规模集成电路研制的主要项目如下: 1.微细加工技术的研究:具体的如电子束曝光技术,目标:条宽0.1～0.5微米。尽管微细加工仅占整个工艺技术的10％左右,但起关键作用。 2.结晶技术的研究:现用的单晶直径为3吋,缺陷密度为10000个/厘米~2。为用于超大规模集成电路,单晶必须尽可能做到没有缺陷,即制造完美单晶。技术指标是采用φ5吋的单晶,缺陷密度为10～100个/厘米~2。 3.工艺技术的研究:包括外延生长、杂质扩散、离子注入、布线、腐蚀等技术。据介绍超大规模集成电路除实现超高密度的目的外,对于杂质扩散要进行三维的精确控制,即在结深方向还要控制杂质浓度的分布情况。为此,只有用离子注入才能实现杂质浓度和分布的精确控制和浅的平整结。 4.试验评价技术的研究:需要有高性能的测试技术和装置。
Looking back at the history of integrated circuits, there are three goals for integrated circuits: high reliability, high speed and miniaturization, mainly for economy. One of the major goals in developing very large scale integrated circuits is to improve yield and performance. The famous city of Japan Shimura Xiong Xiong’s visit to China introduced the research background of super-large-scale integrated circuits and Japan’s research and development system and some technical issues, the summary is summarized as follows: MITC’s major projects are as follows: 1. Micro-processing technology research: Specific, such as electron beam exposure technology, the target: Article width of 0.1 to 0.5 microns. Although microfabrication accounts for only about 10% of the total process technology, it plays a key role. 2. Crystallization technology research: the current single crystal diameter of 3 inches, the defect density of 10000 / cm ~ 2. For use in very large scale integrated circuits, single crystals must be as flawless as possible to create the perfect single crystal. Specifications are used φ5 inch single crystal, defect density of 10 to 100 / cm ~ 2. 3. Process Technology Research: Including epitaxial growth, impurity diffusion, ion implantation, wiring, corrosion and other technologies. It is reported that in addition to the purpose of ultra-high density integrated circuits, three-dimensional precise control of impurity diffusion is needed to control the distribution of impurity concentration in the direction of junction depth. For this reason, precise control of impurity concentration and distribution and shallow flattening can be achieved only with ion implantation. 4. Experimental evaluation of technology research: the need for high-performance test techniques and devices.