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我们采用深能级瞬态波谱(DLTS法)检测了以硼硅玻璃为源的高温扩散工艺所产生的缺陷。已测到的缺陷能级为:E_c—0.12,E_c—0.26,E_c—0.36,E_c—0.55和E_v+0.23eV。业已表明:在后续工艺的磷预淀积、热氧化和再分布中,这些缺陷能级被退火。随着缺陷浓度的降低,载流子的寿命从10微秒提高到36微秒。
We used deep-level transient spectroscopy (DLTS method) to detect the defects caused by the high-temperature diffusion process using borosilicate glass as the source. The measured defect levels were: E_c-0.12, E_c-0.26, E_c-0.36, E_c-0.55 and E_v + 0.23eV. It has been shown that these defect levels are annealed in subsequent processes for phosphorus pre-deposition, thermal oxidation and redistribution. As the defect concentration decreases, the lifetime of the carriers increases from 10 microseconds to 36 microseconds.