论文部分内容阅读
本文用有限元方法对离子注入 GaAs MESFET’s的稳态特性进行了二维数值模拟和分析,并与均匀掺杂器件作了比较.程序中,对边界条件、网格剖分和初值选取方法进行了改进.所开发的程序可以对不同尺寸、不同掺杂分布的平面栅、凹形栅 GaAs MESFET’s进行二维数值分析,得到其内部电位、电场、载流子浓度等物理量的二维分布和器件的I-V特性.本文还讨论了凹形栅的几何形状对器件内部电场强度的影响.最后,对实际的离子注入凹形栅GaAsMESFET进行了模拟,计算结果与实验数据基本吻合.
In this paper, two-dimensional numerical simulation and analysis of steady-state characteristics of ion implantation GaAs MESFET’s are carried out by finite element method and compared with uniform doping devices. In the program, the boundary conditions, meshing and initial value selection method The developed program can perform 2D numerical analysis of GaAs MESFETs with different sizes and different doping distributions to get the two-dimensional distribution and device of internal potential, electric field and carrier concentration IV characteristics of the device.The effect of the geometry of the concave gate on the electric field strength inside the device is also discussed.Finally, the actual GaAsMESFET with ion implantation is simulated and the calculated results agree well with the experimental data.