论文部分内容阅读
用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。在直流12.8V和14.7A/cm~2的驱动下发光亮度为73fL、最大量子效率为4.3×10~(-5)(10.8V,3A/cm~2)
Electroluminescent single crystal films with Au / ZnSe: Mn / n-Ge structure were fabricated by molecular beam epitaxy with the lowest starting voltage of 6V. Under the driving of DC 12.8V and 14.7A / cm ~ 2, the brightness is 73 fL and the maximum quantum efficiency is 4.3 × 10 -5 (10.8 V, 3A / cm 2)