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利用直流磁控反应溅射法制备了SbOx 薄膜 ,利用X射线衍射分析仪和光谱仪分别研究了这种薄膜热致晶化的微观结构和光学性质的变化 ,并通过非晶态薄膜粉末的示差扫描量热实验测出不同加热速度条件下结晶峰温度 ,研究了这种薄膜的结晶动力学。发现沉积态SbOx 薄膜为非晶态 ,非晶态SbOx 薄膜在热致晶化过程中发生了两种变化 ,分别对应为较低温度下Sb晶体和较高温度下立方Sb2 O3 相的生成。退火后晶态薄膜中出现了单质Sb和Sb2 O3 ,30 0℃退火后Sb2 O3 相含量最大。晶态薄膜的反射率均高于沉积态 ,在晶态薄膜中 2 0 0℃退火的薄膜反射率最大。
SbOx thin films were prepared by direct current magnetron reactive sputtering. The microstructures and optical properties of the thin film were studied by X-ray diffraction (XRD) and spectrometer. The differential scanning calorimetry The calorimetric experiment measured the crystallization peak temperature under different heating rates, and studied the crystallization kinetics of this film. It is found that the as-deposited SbOx thin film is amorphous and the amorphous SbOx thin film undergoes two changes in the thermal crystallization process, corresponding to the formation of the Sb crystal at a lower temperature and the cubic Sb2O3 phase at a higher temperature. After annealing, single crystal Sb and Sb 2 O 3 appeared in the crystalline thin film, and the content of Sb 2 O 3 phase was the largest after annealed at 300 ℃. The reflectivity of the crystalline film is higher than that of the as-deposited film, and the reflectivity of the film annealed at 200 ℃ in the crystalline film is the highest.