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采用原子层淀积(ALD)实现了10nmAl2O3为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT).通过对MOS-HEMT器件和传统MES-HEMT器件室温特性的对比,验证了新型MOS-HEMT器件饱和电流和泄漏电流的优势.通过分析MOS-HEMT器件在30—180℃之间特性的变化规律,与国内报道的传统MES-HEMT器件随温度退化程度对比,得出了器件饱和电流和跨导的退化主要是由于输运特性退化造成的,证明栅介质减小了引入AlGaN界面的表面态是提高特性的重要原因.
A high performance AlGaN / GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) with 10nm Al 2 O 3 as gate dielectric was realized by atomic layer deposition (ALD). By comparing the room temperature characteristics of MOS-HEMT devices and conventional MES-HEMT devices And the advantages of the saturation current and leakage current of the new MOS-HEMT device are verified.After analyzing the variation characteristics of the MOS-HEMT device between 30-180 ℃, compared with the reported degree of degradation of the traditional MES-HEMT device in China, It is concluded that the degradation of saturation current and transconductance of the device is mainly caused by the degradation of the transport properties. It is proved that the gate dielectric reduces the surface state introduced into the AlGaN interface and is an important reason for improving the characteristics.