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介绍了一种基于GaN/AlGaN高电子迁移率晶体管(HEMT)的高速、高灵敏度室温太赫兹探测器。在太赫兹波辐射下,HEMT源漏端产生直流光电流,并能被栅压灵敏地调控。探测器中新颖的蝶形天线设计使接收到的太赫兹电场得到显著增强,提高了探测器的响应度。通过测量探测器对不同偏振方向的太赫兹光的响应,有效验证了蝶形天线对太赫兹电场的增强作用。室温下,探测器的等效噪声功率约为5×10-10W/Hz21,平均响应度达42mA/W。实验结果表明,光电流的产生与二维电子气沟道的场效应特性和入射太赫兹波电场在电子沟道中的分布密切相关。自混频理论能很好地描述实验结果。
A high speed and high sensitivity room temperature terahertz detector based on GaN / AlGaN high electron mobility transistor (HEMT) is introduced. Under terahertz radiation, the HEMT source and drain terminals generate DC photocurrent and can be sensitively controlled by the gate voltage. The novel butterfly antenna design in the detector significantly enhances the received terahertz electric field and enhances the responsivity of the detector. By measuring the detector response to terahertz light with different polarization directions, the enhancement effect of the butterfly antenna on the terahertz electric field is validated. At room temperature, the detector’s equivalent noise power is about 5 × 10-10W / Hz21 with an average responsivity of 42mA / W. The experimental results show that the photocurrent is closely related to the field effect of two-dimensional electron gas channel and the distribution of incident terahertz wave in the electron channel. Self-mixing theory can well describe the experimental results.