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鉴于已报道的平面共振遂穿二极管(PRTD)存在的缺点,文中提出了一种新的平面RTD器件结构.以n+GaAs代替半绝缘GaAs衬底,利用硼离子注入产生的非晶化作为RTD器件的电隔离,成功设计研制平面型RTD和由其构成的单-双稳转换逻辑单元,此种结构可适用于以输出端作为公用端的所有电路.
In view of the reported shortcomings of the planar resonant tunneling diode (PRTD), a novel planar RTD device structure is proposed in this paper. The semi-insulating GaAs substrate is replaced by n + GaAs, and the amorphization generated by boron ion implantation is used as RTD Devices, the successful design and development of flat-type RTD and its composition of the single - bistable conversion logic unit, this structure can be applied to the output as a common terminal of all the circuits.