一、引言在1.25μm～1.3μm 波长范围内光纤具有较低损耗的特性,当前在开拓这方面的兴趣促进了用于光纤接收机的高效、快速探测器的发展。市售的锗雪崩光电二极管的波长能与这种系统相匹配,然而,缺点是过剩倍增噪声高、漏电流大。作为另一种途径,人们广泛地研究了三元或四元系Ⅲ-Ⅴ族合金雪崩光电二极管。然而,已经证明,制造一种在工作偏置下效率和暗电流都满意的可靠的Ⅲ-Ⅴ族合金雪崩光电二极管是非常困难的。因为即使是最好的外延生长Ⅲ-Ⅴ族合金层也有相当高的缺陷密度,结果会导致微等离子体机构为主的击穿。再有一种途径,利用 pin 光电二极管与高阻抗 FET 前置放大器相连接 I. INTRODUCTION Optical fibers have low loss characteristics in the 1.25 μm to 1.3 μm wavelength range. The current interest in developing this area has contributed to the development of efficient and fast detectors for optical fiber receivers. The wavelength of a commercially available germanium avalanche photodiode can match this system, however, the disadvantage is that the excess doubled noise is high and the leakage current is large. As another approach, ternary or quaternary III-V alloy avalanche photodiodes have been extensively studied. However, it has proved very difficult to manufacture a reliable group III-V alloy avalanche photodiode that is both satisfactory in both efficiency and dark current under operating bias. Because even the best epitaxial growth group III-V alloy layer has a very high defect density, resulting in the breakdown of micro-plasma-based devices. Another approach is to use a pin photodiode connected to a high-impedance FET preamplifier