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在封闭系统中往Pb_(0.79)Sn_(0.21)Te(100)基片上淀积载流子浓度在10~(17)/厘米~3范围内的P型Pb_(.79)Sn_(0.21)Te外延膜,速率为1.5～3.0微米/小时。这些外延膜是在425～525℃下用符合化学计量或金属略多的料淀积的。淀积的n型膜夹杂着金属。膜的结构受基片缺陷、基片温度及装料组分的影响。制成了厚达100微米的膜。采用肖特基势垒工艺,在外延膜上做出了在77K下黑体探测度为10~(10)厘米赫~(1/2)/瓦的红外探测器阵列。
P-type Pb _ (. 79) Sn_ (0.21) Te with a carrier concentration of 10 ~ (17) / cm ~ 3 was deposited on the Pb_ (0.79) Sn_ (0.21) Te Epitaxial film, the rate of 1.5 to 3.0 microns / hour. These epitaxial films are deposited at 425-525 ° C with stoichiometrically or slightly more stoichiometric amounts of material. The deposited n-type film is intermingled with metal. The structure of the film is affected by substrate defects, substrate temperature and loading components. Films up to 100 microns thick were made. Using the Schottky barrier technology, an infrared detector array with blackbody detection of 10 ~ (10) cm ~ (1/2) / W at 77K was fabricated on the epitaxial film.