White organic light-emitting devices using Zn(BTZ)_2 doped with Rubrene as emitting layer

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Zn(BTZ)2 was synthesized from the complex reaction between zinc acetate dihydrate and 2-(2-hydroxy- phenyl) benzothiazolate. Then Zn(BTZ)2 was used as main light-emitting material doped with different amounts of fluorescent dye Rubrene and fabricated a series of white organic light emitting devices. The configurations were as follows: ITO/PVK:TPD/Zn(BTZ)2:Rubrene/Al. The doping concentration of Rubrene in Zn(BTZ)2 was 1.2%, 0.12%, 0.08% and 0.05%, respectively. According to the EL spectra and CIE coordinates of the above devices, the optimum dop- ing concentration (0.05%, weight percent) had been deter- mined. The steady and bright white light emitting of the de- vice with 0.05% doping concentration had been obtained, and the white emission covered a wide range of driving volt- age (10 — 22.5 V). The CIE coordinates were (x=0.341, y=0.334) at the driving voltage of 20 V, which was very close to the equi-energy point (x=0.333, y=0.333), and the corre- sponding luminance and external quantum efficiency were 4048 Cd/m2 and 0.63% (4.05 Cd/A), respectively. Lastly, we also discussed the emitting mechanisms of the material and the devices. Zn (BTZ) 2 was synthesized from the complex reaction between zinc acetate dihydrate and 2- (2-hydroxy-phenyl) benzothiazolate. Then Zn (BTZ) 2 was used as main light-emitting material doped with different amounts of fluorescent dye Rubrene and The doping concentration of Rubrene in Zn (BTZ) 2 was 1.2%, 0.12% According to the EL spectra and CIE coordinates of the above devices, the optimum dopant concentration (0.05%, weight percent) had been deter mined. The steady and bright white light emitting of the de - vice with 0.05% doping concentration had been obtained, and the white emission covered a wide range of driving volt- age (10-22.5 V). The CIE coordinates were (x = 0.341, y = 0.334) V, which was very close to the equi-energy point (x = 0.333, y = 0.333), and the corre- sponding luminan ce and external quantum efficiency were 4048 Cd / m2 and 0.63% (4.05 Cd / A), respectively. Lastly, we also discussed the emitting mechanisms of the material and the devices.
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