从半导体器件功率老化试验中批缺陷率p(t)求批器件失效率λ(t)方法

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随着可靠性工作的开展,我国无线电整机厂所用电子元器件大都经过筛选试验。对半导体器件进行筛选能显著地提高半导体器件的使用可靠性水平,从而保证了无线电整机的可靠性。在半导体器件筛选试验中采用“PDA控制”试验技术是保证半导体器件可靠性质量水平重要措施,而“PDA控制”试验技术的核心是对批缺陷率p(t)的控制。人们通过实践认识到功率老化试验能较明显淘汰掉有缺陷的器件,而功率老化试验中批缺陷率p(t)极灵敏地显示该批半导体器件可靠性质量水平。从参考资料[1]知批缺陷率p(t)大,说明该批器件筛选试验前批次品率较高,也说明该批器件经筛选试验后的合格品中次品率也较高,可靠性较差。在无线电设备的可靠性预计和评估中,人们感兴趣的是器件在某种电应力下的失效率,而在半导体器件的筛选试验中,功率老化是最接近实际应用的一种试验,因此人们对半导体器件功率老化试验中批缺陷率特别感兴趣。而从功率老化的批缺陷率p(t)中定量推求出半导体器件筛选后合格品的可靠性指标λ(t)是既经济又实用的方法。 With the development of reliability work, most of the electronic components and parts used in China’s radio unit plant undergo screening tests. The screening of semiconductor devices can significantly improve the reliability of the use of semiconductor devices, thus ensuring the reliability of the radio. The “PDA control” test technique in semiconductor device screening tests is an important measure to ensure the reliability and quality of semiconductor devices. The core of “PDA control” test technology is the control of batch defect rate p (t). Through practice, people realize that the power burn-in test can obviously eliminate the defective devices, and the batch defect rate p (t) in the power burn-in test shows the reliability and quality of the batch of semiconductor devices very sensitively. From the reference material [1] know the defect rate p (t) large, indicating that the device before the batch test batch rejection rate is high, also shows that the device after screening tests qualified products in the defective rate is higher, Poor reliability. In radio equipment reliability estimation and evaluation, people are interested in the device under some electrical stress failure rate, and in the semiconductor device screening test, power aging is the closest to the actual application of a test, so people Batch defects in semiconductor device power burn-in are of particular interest. However, it is an economical and practical method to quantitatively estimate the reliability index λ (t) of qualified products after screening the semiconductor devices from the batch defect rate p (t) of power aging.
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