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A subcircuit based model for the insulated gate bipolar transistor(IGBT) is proposed and optimized. The IGBT wide base conductivity modulated resistor is effectively equivalent by using a voltage controlled resistor. Based on analytical equation describing the semiconductor physics, the model parameters are extracted accurately via measured data without device destruction. Employing the MOS level 8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence, the simulation results are verified by comparison with measured results.
Based on analytical equation describing the semiconductor physics, the model parameters are drawn accurately. The IGBT wide base transient modulated resistor is effectively and using. The simulated data is without device destruction. Employing the MOS level 8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence, the simulation results are verified by comparison with the measured results.