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为了研究小电流晶闸管(SCR)在机械模型静电放电(MM ESD)作用下的损伤特性和失效模式,选取ON Semiconductor公司生产的2N5061型小电流晶闸管作为研究对象,开展了机械模型静电放电注入试验,并对试验结果进行了理论分析。研究结果表明:从K+G-端对注入MM ESD时最易导致小电流晶闸管损伤,这是由于在晶闸管内部形成的3个pn结中,J3结结深最浅,并且pn结处于反偏状态时更易发生击穿以及热损伤;机械模型静电放电注入后损伤的小电流晶闸管失效模式为门极失去控制作用。该研究结果对于提高电子器件抗静电能力具有一定的工程指导意义。
In order to study the damage characteristics and failure modes of small current thyristor (SCR) under mechanical model electrostatic discharge (MM ESD), 2N5061 thyristor of low current produced by ON Semiconductor Company was selected as the research object. Electrostatic discharge (ESD) The results of the experiment are analyzed theoretically. The results show that the most vulnerable to small current thyristor damage is the injection of MM ESD from the K + G terminal, which is due to the fact that in the three pn junctions formed inside the thyristor, the junction depth of J3 is the shallowest and the pn junction is in the opposite direction Breakdown and thermal damage are more likely to occur in the state; the failure mode of the small current thyristor damaged by the electrostatic discharge after the mechanical model injection is the gate is out of control. The results of this study have certain engineering significance for improving the antistatic ability of electronic devices.