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采用X-射线衍射(包括小角度衍射方法)研究了低温气相生长金刚石薄膜和单晶硅衬底之间的界面过度层。发现在较高温度下(700℃)过渡层为α-SiC,在较低沉积温度范围(580-290)℃过渡层则由α-SiC和SiO_2所构成。对界面层中α-SiC和SiO_2的晶体结构以及金刚石薄膜面间距进行了讨论。
The interfacial superficial layer between the low temperature vapor grown diamond film and the monocrystalline silicon substrate was investigated by X-ray diffraction (including small angle diffraction method). It is found that the transition layer is α-SiC at higher temperature (700 ℃) and α-SiC and SiO 2 at the lower deposition temperature (580-290) ℃. The crystal structure of α-SiC and SiO_2 in the interface layer and the distance between diamond films are discussed.