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利用作者们开发的有限元二维分析程序对高压半导体器件的电场分布进行了模拟分析.给出了这类器件中有离子注入、场板和栅极延伸等终端结构时的电场分布;根据模拟结果得出突变平面结表面电场的近似公式,将此公式与圆柱坐标对称解和计算机模拟结果进行了比较.
The electric field distribution of high voltage semiconductor devices is simulated and analyzed by using the finite element two-dimensional analysis program developed by the authors.The electric field distribution of such devices with terminal structures such as ion implantation, field plate and gate extension is given. According to the simulation The approximate formula of the surface electric field of the sudden change of plane junction is obtained. The formula is compared with the symmetry solution of cylindrical coordinates and the result of computer simulation.