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报道了我们在Li2 B4O7、Sr3 Ga2 Ge4O14 、LiNbO3 、LiTaO3 等声表面波用压电晶体材料方面的最新研究进展。采用改进型坩埚下降法成功生长了直径 3～ 4英寸的Li2 B4O7晶体 ,并实现了批量生产。作为硅酸镓镧系列新型压电晶体之一 ,Sr3 Ga2 Ge4O14 晶体具有最大的压电系数。报道了直径 2英寸Sr3 Ga2 Ge4O14 晶体的生长结果 ,测试了该晶体的压电性能。在CO2 (90 % )、H2 (10 % )混合气氛中 ,分别在 70 0℃和 4 5 0℃下对LN和LT晶片进行化学还原处理 ,成功制备了 3英寸LN和LT低静电黑片 ,不仅减少了器件制作工序 ,而且使成品率提高了 5～ 8百分点。此外 ,在密封坩埚中生长了低静电LiNbO3 晶体 ,观察到一些新的现象。
The recent research progress of piezoelectric crystal materials for surface acoustic waves such as Li2B4O7, Sr3Ga2Ge4O14, LiNbO3 and LiTaO3 has been reported. The Li2B4O7 crystal with diameter of 3 ~ 4 inches was successfully grown by the improved crucible descent method and the mass production was achieved. As one of the new types of gallium arsenide lanthanum series of piezoelectric crystals, Sr3 Ga2 Ge4O14 crystal has the largest piezoelectric coefficient. The growth of 2-inch diameter Sr3 Ga2 Ge4O14 crystal was reported and the piezoelectric properties of the crystal were tested. LN and LT wafers were chemically reduced at 70 0 ℃ and 45 0 ℃ respectively in a mixed atmosphere of CO2 (90%) and H2 (10%), and 3-inch LN and LT low-voltage black films were successfully prepared. Not only reduced the device manufacturing processes, but also to improve the yield of 5 to 8 percent. In addition, low-static LiNbO3 crystals were grown in a sealed crucible and some new phenomena were observed.