【摘 要】
：
The gain mechanism in GaN Sehottky barrier ultraviolet photodetectors is investigated by focused light beam.When the incident light illuminates the central regi
【机 构】
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State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
论文部分内容阅读
The gain mechanism in GaN Sehottky barrier ultraviolet photodetectors is investigated by focused light beam.When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.
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