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本文应用俄歇电子能谱和X射线光电子能谱对化学腐蚀和硫处理的InSb表面进行了研究。实验中发现经过CP-4腐蚀以后在样品的表面生成了InSb的氧化层,氧化层中的组分是锑的氧化物明显多于铟的氧化物。样品经过硫处理以后能够除去InSb表面的氧化层并且形成硫化物钝化层。
In this paper, Auger electron spectroscopy and X-ray photoelectron spectroscopy of chemical etching and sulfur-treated InSb surface were studied. In the experiment, it was found that after the CP-4 etching, an oxide layer of InSb was formed on the surface of the sample. In the oxide layer, antimony oxide was more obviously than indium oxide. After the sample is sulfur-treated, the oxide layer on the InSb surface can be removed and a sulfide passivation layer can be formed.