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介绍了在高压单晶炉内每次直接合成1000g InP的新工艺。对合成的InP进行测试表明,非掺杂InP的载流子浓度一般为3～6×10~(15)cm~(-3),迁移率4200cm~2/V.s以上,最高可达4700～4900cm~2/V.s,其纯度优于用水平法(HB)合成的InP。
The new technology of synthesizing 1000g InP in high pressure single crystal furnace is introduced. The results show that the carrier concentration of undoped InP is generally 3 ~ 6 × 10 ~ (15) cm ~ (-3), the mobility is 4200cm ~ 2 / Vs and up to 4700 ~ 4900cm ~ 2 / Vs, which is superior to InP synthesized by the horizontal method (HB).