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近年来在<100>硅单晶上热生长厚度约为1微米的二氧化硅绝缘层,然后在其上低压化学汽相沉积厚度为0.5微米的多晶硅膜,经连续Ar~+激光再结晶,使多晶硅晶粒长大,晶粒尺寸从原来的0.03微米增大到10微米以上,甚至成为局部的单晶。这种SOI工艺可用于制造具有很高速度的集成电路,已引起各国有关学者的重视。用再结晶多晶硅制备增强型N构道MOSFET,由于沟道长度比晶粒尺寸大,实际得到的FET的沟道是跨晶界的,大量的晶界、晶粒上缺陷的存在,使有效的电子迁移率降低,影响电性能的提高。
In recent years, a silicon oxide insulating layer having a thickness of about 1 μm is thermally grown on a <100> silicon single crystal, and then a low-pressure chemical vapor deposition polysilicon film having a thickness of 0.5 μm is recrystallized by a continuous Ar + laser, Polysilicon grains grow, the grain size increased from the original 0.03 microns to 10 microns or more, and even become a local single crystal. This SOI process can be used to manufacture integrated circuits with high speed and has drawn the attention of scholars in various countries. The use of recrystallized polysilicon enhanced N-type MOSFET, the channel length than the grain size, the actual FET channel is transgranular, a large number of grain boundaries, the presence of defects on the grain, making effective Electron mobility decreases, affecting the improvement of electrical properties.