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Vecco Instruments公司与Soitec集团的Picogiga International公司开始了一项正在形成市场的Si上GaN技术的联合开发计划。该项联合开发计划利用Picogiga公司的制造衬底及化合物半导体的专门技术和Veeco公司的MBE 的经验,加快批量生产Si衬底GaN,以用于宽带高端无线用途。上述两家公司将一起创造世界第一台优化MBE外延炉,用于Picogiga公司的专利GaN/Si生长工艺。Picogiga公司的工程师将与Veeco公司的MBE设
Vecco Instruments and Soogc Group’s Picogiga International Inc. started a joint development program for GaN on Si that is in the process of being formed. The joint development program capitalizes on Picogiga’s manufacturing expertise in substrate and compound semiconductors and Veeco’s MBE to accelerate the mass production of Si-substrate GaN for broadband high-end wireless use. The two companies will work together to create the world’s first optimized MBE epitaxial oven for Picogiga’s patented GaN / Si growth process. Picogiga’s engineers will be working with Veeco’s MBE facility