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众所周知,在半导体——电解液界面上进行的氧化还原过程的速度取决于样品的照度。我们利用这一现象,以便在半导体材料的表面上获得图象。当样品光照从半导体一溶液表面的反面来时,这种系统可以实现长波照象,特别是在光谱的红外区,其波长界限只取决于半导体的禁带宽度。这种系统与现有的低色散照象材料相比有最大的优点,这就是在该系统中可以控制照片的灵敏度,在材料保存期间基本上完全消除了因背景热辐射而产生的漏光的影响。
It is well known that the speed of the redox process at the semiconductor-electrolyte interface depends on the illuminance of the sample. We use this phenomenon to obtain the image on the surface of the semiconductor material. When the sample is illuminated from the opposite side of the semiconductor-solution surface, the system can achieve long-wave images, especially in the infrared region of the spectrum, whose wavelength limits depend only on the forbidden band width of the semiconductor. This system offers the greatest advantage over existing low-dispersion photographic materials in that the sensitivity of the photos in the system can be controlled and the effect of light leakage due to background thermal radiation is substantially completely eliminated during the preservation of the material .