论文部分内容阅读
提出了一种提高微波宽带压控振荡器(VCO)稳定性的方法。压控振荡器采用了从谐振电路输出的结构,并与后级缓冲放大电路之间加入了一个匹配电路,从而可有效提高宽带振荡器的稳定性,改善振荡器的温度特性。基于此电路结构,采用Ga As HBT工艺设计了一款微波宽带压控振荡器芯片。为拓宽振荡器的工作频带和降低相位噪声,使用片外Ga As超突变结、高Q值变容二极管。该宽带压控振荡器芯片实测结果显示,在调谐电压为1.5~15 V内,可实现输出频率覆盖13~19 GHz,调谐线性度≤2.5∶1,调谐电压8 V时相位噪声为-89 d Bc/Hz@100 k Hz。该压控振荡器工作电压为5 V,工作电流为65 m A,19 GHz频率点处输出功率在85℃环境温度下比在25℃环境温度下仅下降2 d B,具有良好的温度稳定性。
A method to improve the stability of microwave wideband voltage controlled oscillator (VCO) is proposed. The voltage-controlled oscillator adopts the structure output from the resonant circuit and a matching circuit is added between the voltage-controlled oscillator and the buffer amplifier at the subsequent stage to effectively improve the stability of the broadband oscillator and improve the temperature characteristics of the oscillator. Based on this circuit structure, a GaAs HBT process is used to design a microwave broadband VCO chip. To broaden the oscillator’s operating band and reduce phase noise, an off-chip Ga As hyper-kerma junction, high-Q varactor diode is used. The broadband VCO chip measured results show that the tuning voltage of 1.5 ~ 15 V, the output frequency can be achieved covering 13 ~ 19 GHz, the tuning linearity ≤ 2.5:1, the tuning voltage of 8 V phase noise of -89 d Bc / Hz @ 100 k Hz. The voltage-controlled oscillator operates at 5 V and operates at 65 mA. At 19 GHz, the output power drops only 2 dB at 85 ° C ambient temperature and 25 ° C ambient temperature, with good temperature stability .