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本文比较了中子辐照。压缩变形和原生LEC砷化镓等三种不同来源样品的EPR“As_(Ga)”的Hamiltonian参数。并系统地研究了EPR“As_(Ga)”的浓度和低温光猝灭行为随退火温度的变化,从而进一步验证了EPR“As_(Ga)”的本性,即除孤立As_(Ga)反位原子外,还可能包括As_(Ga)的一些空位络合物。这些不同本性的EPR“As_(Ga)”缺陷及其它有关的缺陷在样品热处理过程中可能相互转化。按照物理化学中Le Chatlier原理,缺陷的原始浓度和晶体内部应变能似应是引起这些转化反应的重要因素。
This article compares neutron irradiation. Hamiltonian parameters of EPR “As_ (Ga)” of three kinds of samples of different origins, such as compression deformation and primary LEC gallium arsenide. The concentration of the As_ (Ga) and the change of the photoluminescence at low temperature with the annealing temperature were systematically studied, which further validated the nature of the As_ (Ga) In addition, some vacancy complexes of As_ (Ga) may also be included. These different nature of EPR “As_ (Ga)” defects and other related defects in the sample may be transformed during heat treatment. According to the principle of Le Chatlier in physical chemistry, the original concentration of defects and the internal strain energy in the crystal should be important factors in causing these conversion reactions.