论文部分内容阅读
半导体器件的功率极限是由它的热阻决定的,要决定一种新器件的最大使用功耗,就必须首光测量热阻.但DO-35玻封二极管的管壳很小,无法直接测量其管芯的温度,从而算出热阻.为此,笔者设计了一种利用半导体器件温度特性测量热阻的方法,避免了复杂的设备和直接测量管芯温度的困难,只要一块数字式万用表就能完成热阻测量,且测量误差小于10%.此外,这种方法可方便地推广到各种其它封装形式的中.小功率半导体器件上,特别是适用于塑料封装和陶瓷封装等无其它方法测量热阻的器件.
The power limit of a semiconductor device is determined by its thermal resistance, which must be measured first to determine the maximum power dissipation of a new device, but the DO-35 glassy-bounded diode has a small package and can not be directly measured Its die temperature to calculate the thermal resistance.To this end, the author designed a method using the temperature characteristics of semiconductor devices to measure thermal resistance, to avoid the complex equipment and the difficulty of direct measurement of the die temperature, as long as a digital multimeter Can complete the thermal resistance measurement, and the measurement error is less than 10% .In addition, this method can be easily extended to a variety of other packages in the medium and low power semiconductor devices, especially for plastic packaging and ceramic packaging, no other method Device to measure thermal resistance.