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本文采用改进的Ｗｉｇｎｅｒ－Ｂｒｉｌｌｏｕｉｎ微扰理论，研究了束缚于半导体量子阱中电子共振谱的分裂．考虑到晶格振动的各种光学极化模，解释了电子共振谱在横光学声子频率附近的这种“奇异”的分裂和钉扎行为．计算了跃迁频率对磁场强度的依赖性．理论结果和他人的实验数据进行了比较．最后指出，这种共振分裂和钉扎行为是量子阱中电子和界面声子相互作用的结果．
In this paper, the improved Wigner-Brillouin perturbation theory is used to study the splitting of the electron resonance spectrum bound in the semiconductor quantum well. Taking into account the various optical polarization modes of the lattice vibration, this “singular” splitting and pinning behavior of the electron resonance spectrum in the vicinity of the transverse optical phonon frequency is explained. The dependence of transition frequency on magnetic field strength is calculated. The theoretical results are compared with the experimental data of others. Finally, it is pointed out that this resonance splitting and pinning behavior is the result of the interaction of the electron and interface phonons in the quantum well.