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本文用有限单元法对双岛型多晶硅压力传感器的应力分布进行了计算机模拟.根据模拟计算的应力分布规律,优化多晶硅应变电阻的设计,弥补了多晶硅压阻系数低于单晶硅的缺点,研制出了双岛结构多晶硅压力传感器.传感器具有高灵敏度和高的工作温度.计算分析结果与实验基本相符
In this paper, the finite element method was used to simulate the stress distribution of the dual island polysilicon pressure sensor.According to the stress distribution law of simulation, the design of polysilicon strain resistor was optimized to make up for the shortcoming of the polysilicon piezoresistive coefficient lower than monocrystalline silicon, A double island structure polysilicon pressure sensor.The sensor has high sensitivity and high working temperature.The calculation results are in good agreement with the experiment