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The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition(MOCVD) were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.
The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition (MOCVD) were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5 ° to 2.0 ° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2 °. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.