用剖析法观察了两类光伏型红外碲镉汞(MCT)探测器晶片:一类其D~*在1×10~8～5.9×10~9cm Hz~(1/2)/W之间,λ。在8～13.8μm范围内;另一类是无P—N结特性的。观察结果表明:前一类晶片(以后简称为“有信号”的)相对辐照方向具有[111]取向;而后一类晶片(简称为“无信号”的)其取向是无规则的。本文从晶体中原子排布及缺陷(位错)的特点,初步讨论了晶片取向对探测器性能的影响。 Two types of photovoltaic MCT detector wafers were observed by the method of analysis: one is between 1 × 10 ~ 8 ~ 5.9 × 10 ~ 9cm Hz ~ (1/2) / W, λ. In the range of 8 ~ 13.8μm; the other is no P-N junction characteristics. The observation results show that the former type of wafer (hereinafter referred to simply as “signal”) has a [111] orientation with respect to the irradiation direction; and the latter type of wafer (abbreviated as “no signal”) has an irregular orientation. In this paper, the influence of the orientation of the wafer on the performance of the detector is discussed preliminarily from the characteristics of atomic arrangement and defects (dislocations) in the crystal.