报道了６００门和８００门两种ＥＣＬ超高速移位寄存器；介绍了多晶硅发射极双极晶体管的结构和有关先进工艺，包括深槽隔离、多晶硅发射极、钴硅化物接触和浅结薄基区等；使用这种多晶硅发射极晶体管，３μｍ特征尺寸设计的１９级环形振荡器的平均门延迟小于５０ｐｓ。给出了６００门移位寄存器的电路设计和版图设计，讨论了互连线和双层金属布线对６００门和８００门移位寄存器的最高工作频率的影响 Reported 600 gate and 800 gate ECL super fast shift register; introduced the structure of polysilicon emitter bipolar transistor and related advanced technology, including deep trench isolation, polysilicon emitter, cobalt silicide contacts and shallow junction base region , Etc .; with this polysilicon emitter transistor, the 19-gate ring oscillator designed in the 3 μm feature size has an average gate delay of less than 50 ps. The circuit design and layout design of 600 shift registers are given. The influence of interconnect and double-layer metal wiring on the maximum operating frequency of 600-gate and 800-gate shift registers is discussed