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研究了一种基于国产SiC衬底的L波段GaN高效率内匹配器件。利用在片微波测试和直流测试相结合方法获得器件的小信号模型,外推得到大信号模型,并进行负载牵引方法验证。在此基础上设计两胞匹配电路,采用电感-电容匹配网络,器件阻抗提升到12Ω,利用改进型威尔金森功率分配器和功率合成器将阻抗由12Ω提升到50Ω,功率分配器和匹配电容使用高Q值陶瓷基片加工。研制的内匹配GaN HEMT器件在测试频率为1.20~1.32 GHz时,输出功率大于80 W,功率增益大于16.2 dB,最大功率附加效率达到72.1%。
A L-band GaN high efficiency internal matching device based on domestic SiC substrates was studied. The small signal model of the device is obtained by the combination of on-chip microwave test and DC test. The large signal model is extrapolated and the load-pull method is validated. On the basis of this, a two-cell matching circuit is designed. With the inductor-capacitor matching network, the impedance of the device is increased to 12Ω. The improved Wilkinson power splitter and power combiner are used to increase the impedance from 12Ω to 50Ω. The power divider and matching capacitor Use high-Q ceramic substrate processing. The developed GaN HEMT devices with output power greater than 80 W, power gain greater than 16.2 dB, and maximum power added efficiency of 72.1% at the test frequency of 1.20 ~ 1.32 GHz.