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对InP晶片的化学腐蚀特性进行了分析,研究了酸性腐蚀液(盐酸系列腐蚀液)的配比、腐蚀液温度等工艺条件对InP晶片腐蚀速率、表面腐蚀形貌和化学腐蚀片表面粗糙度的影响。研究结果表明,腐蚀液温度为室温时,改变腐蚀液配比,InP晶片的腐蚀速率变化不明显,而当腐蚀液温度发生变化时则腐蚀速率、晶片表面腐蚀形貌(显微镜下的表面状况)和化学腐蚀后晶片的表面粗糙度均有较大变化,当腐蚀液温度控制在一定范围时,晶片表面光洁,显微镜下观察到的腐蚀图形均匀一致。研究结果对确定InP晶体加工过程中的化学腐蚀工艺有一定的指导意义。
The chemical etching properties of InP wafers were analyzed. The effects of technological conditions such as the ratio of acid etching solution (hydrochloric acid etching solution) and etching temperature on the etching rate, surface corrosion morphology and chemical etching surface roughness of InP wafers influences. The results show that when the temperature of the etching solution is room temperature, the etching rate of the InP wafer does not change obviously when the etching solution ratio is changed. However, when the temperature of the etching solution changes, the corrosion rate, the surface morphology of the wafer (the surface condition under the microscope) And the surface roughness of the wafer after chemical etching have great changes. When the temperature of the etching solution is controlled within a certain range, the surface of the wafer is smooth and the corrosion patterns observed under the microscope are uniform. The research results have certain guiding significance for the determination of chemical etching process in InP crystal processing.