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在自制设备上用氢化物气相外延(HVPE)方法在α-Al_2O_3以及GaN/α-Al_2O_3衬底上生长了InN薄膜,并对其性质进行了研究。重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了其表面性质,用霍尔测量研究了其电学性质。x射线衍射的结果表明,直接在α-Al_2O_3上生长得到的是InN多晶薄膜;而在GaN/α-Al_2O_3上得到的InN薄膜都只有(0002)取向,并且没有金属In或是In相关的团簇存在。综合分析可以发现,在650℃时无法得到InN薄膜,而在温度550℃时生长的InN薄膜具有光滑的表面和最好的晶体质量。
InN films were grown on α-Al 2 O 3 and GaN / α-Al 2 O 3 substrates by hydride vapor phase epitaxy (HVPE) on homemade devices. The properties of InN thin films were also studied. The influence of the growth temperature on the InN thin film was studied emphatically. The structure of the InN thin film was studied by X-ray diffraction. The surface properties of the InN thin film were studied by scanning electron microscopy. The electrical properties of the InN thin film were investigated by Hall measurement. The results of x-ray diffraction show that the InN films grown directly on α-Al 2 O 3 are only (0002) oriented and have no In or In due to the InN films grown on GaN / α-Al 2 O 3 Clusters exist. The comprehensive analysis shows that the InN film can not be obtained at 650 ℃, while the InN film grown at 550 ℃ has a smooth surface and the best crystal quality.