论文部分内容阅读
A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating(SI) 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm(6.3 W), a peak power added efficiency(PAE) of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_(ds) = 25 V and V_(gs) = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.
A high power density monolithic power amplifier operated at Ku band is utilized utilizing a 0.3 μm AlGaN / GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range , the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W), a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse condition when operated at V_ (ds) = 25 V and V - (gs) = -4 V. These power levels, the amplifier exhibits a power density in excess of 5 W / mm.