本文介绍采用辉光放电法分解SiH_4+Ar+PH_3的混合气体淀积掺磷氢化非晶硅膜,即a-Si:P:H.再使其结晶化,得到非晶-微晶混合相结构的Si:P:H膜,即AK-Si:P:H.对膜的结构和性质作了探讨和分析.结果表明,AM-Si:P:H合金膜结构均匀、致密,对可见光及近红外有良好光吸收.退火温度达到500℃以上时,AM-Si:P:H膜的电导特性有一大的突破.S-W效应明显减小,是p-i-n太阳能电池所希望的n~+型材料. This article describes the use of glow discharge decomposition of SiH_4 + Ar + PH_3 mixed gas deposition of phosphorus-doped hydrogenated amorphous silicon film, ie, a-Si: P: H. And then to crystallize to obtain amorphous-microcrystalline mixed phase structure The structure and properties of the films were discussed and analyzed.The results show that the structure of the AM-Si: P: H alloy films is uniform and compact, the visible light and the near Infrared has a good absorption of light.An annealing temperature above 500 ℃, the conductivity of AM-Si: P: H film has a major breakthrough.SW effect is significantly reduced, is the pin solar cells hope n ~ + type material.