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介绍了S波段单级单片微波集成放大器的设计方法 ,电路核心为高电子迁移率晶体管 (HighElectronMobilityTransistor,HEMT) .针对在该波段高电子迁移率晶体管稳定性较差、噪声性能优秀的特点设计电路拓扑 ,在HEMT的输入端并联一个 2 0 0Ω电阻 ,用HP EESOF公司的Libra 2 .1软件进行了小信号电路仿真与设计 .仿真结果表明设计的放大器是绝对稳定的 ,在 2～ 3GHz频带内增益为1 4.2dB ,纹波小于 0 .4dB ,噪声系数约 2 .7dB ,满足实用要求 .
The design method of S-band single-stage monolithic microwave integrated amplifier is introduced, and the core of the circuit is High Electron Mobility Transistor (HEMT). In view of the poor stability and high noise performance of the high electron mobility transistor Topology, a 200 Ω resistor in parallel with the input of the HEMT was used to simulate and design the small-signal circuit with HP EESOF’s Libra 2.1 software.The simulation results show that the designed amplifier is absolutely stable in the frequency range of 2 ~ 3GHz Gain of 4.2dB, ripple less than 0.4dB, noise figure of about 2.7dB, to meet the practical requirements.