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本文讨论美国霍尼威尔公司新发展的四种碲镉汞光电二极管:1.2.06微米碲镉汞雪崩光电二极管;2.10.6微米碲镉汞光电二极管;3.R_0A乘积为0.7欧-厘米~2的高D~＊碲镉汞光电二极管(10.6微米);4.半导体致冷10.6微米光混频器。2.06微米雪崩光电二极管是为Q开关的掺钬氟化锂钇(Ho:YLF)激光器发展的。这种器件的雪崩增益为9～36。10.6微米光电二极管的平均量子效率为30％。制备了单元为250微米×250微米的五元线列,其单
This article discusses four new HgCdTe photodiodes developed by Honeywell, USA: 1.2.06 μm HgCdTe avalanche photodiodes; 2.10.6 μm HgCdTe photodiodes; 3. R_0A product of 0.7 Ω-cm- 2 high D ~ * HgCdTe photodiode (10.6 microns); 4. Semiconductor cooled 10.6 micron optical mixer. The 2.06-micron avalanche photodiode was developed for a Q-switched holmium-doped lithium fluoride yttrium (Ho: YLF) laser. The device has an avalanche gain of 9 to 36.10.6 micrometres. The photomultiplier has an average quantum efficiency of 30%. A five-element line with a cell size of 250 microns × 250 microns was prepared