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在不同脉冲偏压值下采用90°弯管磁过滤阴极电弧离子镀于硅片表面制备四面体非晶碳膜(Ta-C),研究了脉冲偏压对薄膜硬度、沉积速率、表面形貌及键价结构的影响。结论表明,薄膜沉积速率随脉冲偏压值的增加呈先增后减趋势,偏压值与膜层硬度值呈负相关性,高的偏压会抑制膜层中sp3键的形成,还能在一定程度上抑制大颗粒形成。本文研究内容为工业应用中通过脉冲偏压调整优化膜层综合性能提供参考。
The effects of pulse bias on the film hardness, deposition rate, surface topography were investigated by using 90 ° elbow magnetic filtered cathodic arc ion plating on the surface of silicon wafer at different pulse bias values. And the impact of the key price structure. The results show that the deposition rate increases firstly and then decreases with the increase of pulse bias value. The bias voltage has a negative correlation with the film hardness. High bias can inhibit the formation of sp3 bond in the film, To some extent inhibit the formation of large particles. The content of this paper provides a reference for optimizing the overall performance of the film by pulse bias adjustment in industrial applications.