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日本KDD研究和发展实验室提出了一种新型异质结构雪崩光电二极管,并且已用液相外延和锌扩散方法成功地制造了这种器件。这种器件是由InP衬底上连续生长三层的外延片所构成,即In_(0.53)Ga_(0.47)As光吸收层、InGaAsP缓冲层和InP雪崩倍增层。器件在0.9V_B下暗电流密度达到1×10~(-4)A/cm~2,当用1.15μm的光照时,二极管的最大倍增增益为880,外量
Japan KDD Research and Development Laboratory has proposed a new heterostructure avalanche photodiode, and has been successfully fabricated using liquid-phase epitaxy and zinc diffusion methods. The device consists of three successive layers of epitaxial wafers on an InP substrate, namely the In_ (0.53) Ga_ (0.47) As light absorbing layer, the InGaAsP buffer layer and the InP avalanche multiplication layer. The dark current density at 0.9V_B reaches 1 × 10 ~ (-4) A / cm ~ 2. When using 1.15μm light, the maximum gain of diode is 880,