The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.